High Voltage MOSFET
N-Channel Enhancement Mode
IXTA 1N100
IXTP 1N100
V DSS
I D25
R DS(on)
= 1000 V
= 1.5 A
= 11 ?
Avalanche Energy Rated
Symbol
Test Conditions
Maximum Ratings
TO-220AB (IXTP)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
1000
1000
V
V
V GS
V GSM
Continuous
Transient
± 30
± 40
V
V
GD
S
D (TAB)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
1.5
6
A
A
I AR
1.5
A
TO-263 AA (IXTA)
E AR
E AS
T C = 25 ° C
T C = 25 ° C
6
200
mJ
mJ
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 18 ?
3
V/ns
G
S
D (TAB)
P D
T C = 25 ° C
54
W
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
4 g
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
° C
International standard packages
High voltage, Low R DS (on) HDMOS TM
process
Rugged polysilicon gate cell structure
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
V DSS
V GS = 0 V, I D = 250 μ A
1000
V
Switch-mode and resonant-mode
power supplies
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 25 μ A
V GS = ± 30 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2.5
4.5
± 100
25
500
V
nA
μ A
μ A
Flyback inverters
DC choppers
High frequency matching
Advantages
R DS(on)
V GS = 10 V, I D = 1.0A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
11
?
Space savings
High power density
? 2004 IXYS All rights reserved
98545C(08/04)
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